Understanding stability diagram of perpendicular magnetic tunnel junctions

Stability of magnetic tunnel junctions

When magnetic tunnel junctions (MTJ) are built into a memory device they will be arranged in a matrix; therefore some of the not addressed elements will be exposed to a significant field during the switching of one element. It has to be avoided that the state of not selected MTJ is changed during this process. Here we present data on the stability of MTJ against small fields which occur during ...

Second order anisotropy contribution in perpendicular magnetic tunnel junctions

Hard-axis magnetoresistance loops were measured on perpendicular magnetic tunnel junction pillars of diameter ranging from 50 to 150 nm. By fitting these loops to an analytical model, the effective anisotropy fields in both free and reference layers were derived and their variations in temperature range between 340 K and 5 K were determined. It is found that a second-order anisotropy term of th...

Magnetic tunnel junctions using Co/Ni multilayer electrodes with perpendicular magnetic anisotropy

Enhanced tunneling magnetoresistance and perpendicular magnetic anisotropy in Mo/CoFeB/MgO magnetic tunnel junctions

Articles you may be interested in Perpendicular magnetic anisotropy in Ta|Co40Fe40B20|MgAl2O4 structures and perpendicular CoFeB|MgAl2O4|CoFeB magnetic tunnel junction Appl. Large enhanced perpendicular magnetic anisotropy in CoFeB/MgO system with the typical Ta buffer replaced by an Hf layer

Magnetic Tunnel Junctions

Application of Bardeen’s tunneling theory to magnetic tunnel junctions having a general degree of atomic disorder reveals the close relationship between magneto-conduction and voltage-driven pseudo-torque, as well as the thickness dependence of tunnel-polarization factors. Among the results: 1) The torque generally varies as sin θ at constant applied voltage. 2) Whenever polarization factors ar...